Electronic Properties of Complex Oxide Interfaces
نویسندگان
چکیده
منابع مشابه
Electronic properties of complex interfaces and nanostructures
This thesis investigates the structural and electronic properties of graphene, polyaromatic hydrocarbon (PAH) molecules, and other carbon-based materials, when interacting with metallic surfaces, as well as under the influence of different types of perturbations. Density functional theory, incorporating van der Waals interactions, has been employed. PAH molecules can, with gradual accuracy, be ...
متن کاملElectronic phenomena at complex oxide interfaces: insights from first principles.
Oxide interfaces have attracted considerable attention in recent years due to the emerging novel behavior which does not exist in the corresponding bulk parent compounds. This opens possibilities for future applications in oxide-based electronics and spintronics devices. Among the different materials combinations, heterostructures containing the two simple band insulators LaAlO(3) and SrTiO(3) ...
متن کامل6 SCIENTIFIC HIGHLIGHT OF THE MONTH: Electronic Phenomena at Complex Oxide Interfaces: Insights from First Principles Electronic Phenomena at Complex Oxide Interfaces: Insights from First Principles
Oxide interfaces have attracted considerable attention in recent years due to the emerging novel behavior which does not exist in the corresponding bulk parent compounds. This opens possibilities for future applications in oxide based electronics and spintronics devices. Among the different materials combinations, heterostructures containing the two simple band insulators LaAlO3 and SrTiO3 have...
متن کاملOxide Interfaces for Novel Electronic Applications Oxide Interfaces for Novel Electronic Applications
Oxide heterostructures have been shown to exhibit unusual physics and hold the promise of novel electronic applications. We present a set of criteria to select and design interfaces, particularly those that can sustain a high-density twodimensional electron gas (2DEG). We describe how first-principles calculations can contribute to a qualitative and quantitative understanding, illustrated with ...
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boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2006
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927606063641